VS-12CTQ...PbF Series, VS-12CTQ...-N3 Series
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Vishay Semiconductors
Revision: 22-Aug-11
2
Document Number: 94130
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Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop per leg
See fig. 1
VFM
(1)
6 A
TJ
= 25 °C
12 A 0.73
0.60
V
6 A
TJ
= 125 °C
12 A 0.64
0.53
Maximum reverse leakage curent per leg
See fig. 2
IRM
(1)
TJ
= 25 °C
VR
= Rated V
R
0.8
mA
TJ
= 125 °C
7.0
Threshold voltage
VF(TO)
TJ
= T
J
maximum
0.35 V
Forward slope resistance
rt
18.23
m?
Maximum junction capacitance per leg
CT
VR
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C
400 pF
Typical series inductance per leg
LS
Measured lead to lead 5 mm from package body 8.0 nH
Maximum voltage rate of change dV/dt
Rated VR
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
TJ, TStg
- 55 to 175 °C
Maximum thermal resistance,
junction to case per leg
RthJC
DC operation
See fig. 4
3.50
°C/W
Maximum thermal resistance,
junction to case per package
DC operation 1.75
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth and greased 0.50
Approximate weight
2g
0.07 oz.
Mounting torque
minimum
6 (5)
kgf · cm
(lbf · in)
maximum
12 (10)
Marking device Case style TO-220AB
12CTQ035
12CTQ040
12CTQ045
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